GaN Chargers

GaN Chargers Products

Gallium nitride (GaN) was first synthesized artificially in 1928 and underwent continuous technological improvements over the following 70 years. It wasn’t until the 1990s that it found widespread application in the manufacturing of light-emitting diodes (LEDs). The initial development aimed at creating LEDs of various colors, ranging from red to ultraviolet.

Over time, gallium nitride gradually replaced silicon-based devices in the semiconductor field. The material characteristics of gallium nitride make it significantly superior to silicon-based devices in many aspects. Gallium nitride crystals can be grown on various substrates, including sapphire, silicon carbide (SiC), and silicon (Si). Growing gallium nitride epitaxial layers on silicon substrates allows it to leverage existing silicon manufacturing infrastructure without the need for expensive specialized production equipment, while also utilizing low-cost, large-diameter silicon wafers.

The introduction of gallium nitride chargers, with their excellent power density and charging performance, immediately gained popularity among consumers and manufacturers. Subsequently, more and more companies, like KOOM, have adopted gallium nitride materials to replace traditional silicon-based components in charger production. Today, gallium nitride chargers have almost become synonymous with high-performance chargers.

GaN Chargers Features

Semiconductors in traditional chargers primarily use silicon as the main material. However, gallium nitride (GaN) significantly surpasses silicon in several key performance parameters. For instance, GaN has a three times wider bandgap than silicon, ten times higher breakdown field strength, three times faster electron mobility, and twice the thermal conductivity of silicon. These performance enhancements bring about important advantages. Firstly, GaN is better suited for manufacturing high-power and high-frequency power devices. Secondly, due to the performance superiority of GaN, it enables the production of smaller-sized devices with higher power density. This meets the increasingly urgent demands of modern business and travel enthusiasts who seek efficient and lightweight chargers that can be carried on the go.

KOOM’s self-developed gallium nitride chargers provide ultra-high power and feature an ultra-thin foldable plug design. They can rapidly charge electronic devices such as smartphones, tablets, and laptops. The chargers also incorporate a five-fold protection mechanism, including over-voltage protection, over-temperature protection, short-circuit protection, over-current protection, and lightning protection, ensuring safe usage.

36W GaN Chargers Structur View
36W GaN Chargers Structur View
65W GaN Chargers Structur View
65W GaN Chargers Structur View

FAQs

Gallium nitride chargers offer several advantages, including high power density, high efficiency, compact size, multiple safety protections, versatility, and environmental friendliness.

The necessity of using a gallium nitride charger depends on individual needs and usage scenarios. If there is a requirement for fast charging, portability, charging multiple devices, high-power applications, and environmental considerations, a gallium nitride charger is necessary.

Our gallium nitride chargers support various fast charging protocols such as Quick Charge, Type-C, Qualcomm Adaptive Fast Charging, Apple Fast Charging, and others, ensuring compatibility with a wide range of devices.

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